Single-charge escape processes through a hybrid turnstile in a dissipative environment

We have investigated the static, charge-trapping properties of a hybrid superconductor–normal metal electron turnstile embedded in a highohmic environment. The device includes a local Cr resistor on one side of the turnstile, and a superconducting trapping island on the other side. The electron hold times, τ ∼ 2–20 s, in our two-junction circuit are comparable with those of typical multi-junction, N > 4, normal-metal single-electron tunneling devices. A semi-phenomenological model of the environmental activation of tunneling is applied for the analysis of the switching statistics. The experimental results are promising for electrical metrology applications. 4 Author to whom any correspondence should be addressed. New Journal of Physics 13 (2011) 01304